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Aktive Komponenten

SiC Mosfets

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Gehäusetyp Topologie Sperrspannung [V] RDS on [mOhm] Nennstrom [A] Nennstrom [mA] Nennstrom [25°] Betriebstemperatur[°C] Produkt Feature Produkt Status
No Image GP2T020A120X-SBT SemiQ Bare Die SiC Mosfets Aktive Komponenten sawn on blue tape 1200 20
in production
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SemiQ GP2T020A120X GP2T020A120X SemiQ Bare Die SiC Mosfets Aktive Komponenten unsawn wafer 1200 20
in production
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No Image GP2T040A120X-SBT SemiQ Bare Die SiC Mosfets Aktive Komponenten sawn on blue tape 1200 40
in production
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SemiQ GP2T040A120X GP2T040A120X SemiQ Bare Die SiC Mosfets Aktive Komponenten unsawn wafer 1200 40
in production
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No Image GP2T080A120X-SBT SemiQ Bare Die SiC Mosfets Aktive Komponenten sawn on blue tape 1200 80
in production
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SemiQ GP2T080A120X GP2T080A120X SemiQ Bare Die SiC Mosfets Aktive Komponenten unsawn wafer 1200 80
in production
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No Image GP2T020A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 20 119 0,119 86
in production
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SemiQ GP2T020A120H GP2T020A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 20 119 0,119 86 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T040A120U GP2T040A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 37 63 0,063 47 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ*
 in production
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SemiQ GP2T040A120H GP2T040A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 37 63 0,063 47 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T040A120J GP2T040A120J SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-7L Discrete 1200 38 66 0,066 49 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T080A120U GP2T080A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 200mJ*
 in production
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SemiQ GP2T080A120H GP2T080A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving • Increased creepage due to notched design
 in production
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SemiQ GP2T080A120J GP2T080A120J SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-7L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving
 in production
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SemiQ GCMS010B120S1-E1 GCMS010B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 9 218 0,218 157 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX010B120S1-E1 GCMX010B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 10 202 0,202 146 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMS080B120S1-E1 GCMS080B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 77 30 0,03 22 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling diode with zero reverse recovery SiC SBDs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMS040B120S1-E1 GCMS040B120S1-E1 SemiQ SiC Module SiC Mosfets Aktive Komponenten SOT-227 Module 1200 37 57 0,057 42 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
Anfragen
SemiQ GCMX040B120S1-E1 GCMX040B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 40 57 0,057 42 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
Anfragen
SemiQ GCMX080B120S1-E1 GCMX080B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 80 30 0,03 22 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
Anfragen
SemiQ GCMS020B120S1-E1 GCMS020B120S1-E1 SemiQ SiC Module SiC Mosfets Aktive Komponenten SOT-227 Module 1200 20 113 0,113 81 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX020B120S1-E1 GCMX020B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 20 113 0,113 81 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX020A120B2B1P GCMX020A120B2B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B2 Half Bridge Module 1200 19 102 0,102 89 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX010A120B2B1P GCMX010A120B2B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B2 Half Bridge Module 1200 9 214 0,214 186 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX010A120B3B1P GCMX010A120B3B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Half Bridge Module 1200 9 173 0,173 151 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX005A120B3B1P GCMX005A120B3B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Half Bridge Module 1200 4,4 383 0,383 331 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX040A120B3H1P GCMX040A120B3H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Full Bridge Module 1200 38 53 0,053 46 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX020A120B3H1P GCMX020A120B3H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Full Bridge Module 1200 18,1 93 0,093 81 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX020A120B2H1P GCMX020A120B2H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B2 Full Bridge Module 1200 18 102 0,102 88 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Anfragen
SemiQ GCMX040A120B2H1P GCMX040A120B2H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Full Bridge Module 1200 38 56 0,056 49 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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